FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Operate |
|---|---|---|---|---|---|---|
| FHW1210HCR60JGT | 600nH | 5% | 45 | 1.2 | ||
| FHW1210HCR56GGT | 560nH | 2% | 45@150MHz | 45 | 1.1 | |
| FHW1210HCR56JGT | 560nH | 5% | 45@150MHz | 45 | 1.1 | |
| FHW1210HCR56KGT | 560nH | 10% | 45@150MHz | 45 | 1.1 | |
| FHW1008UCR56GGT | 560nH | 2% | 45@100MHz | 45 | 1.33 | |
| FHW1008UCR56KGT | 560nH | 10% | 45@100MHz | 45 | 1.33 | |
| FHW1008UCR56JGT | 560nH | 5% | 45@100MHz | 45 | 1.33 | |
| FHW0805UCR56JGT | 560nH | 5% | 23@50MHz | 23 | 1.9 | |
| FHW0805UCR56KGT | 560nH | 10% | 23@50MHz | 23 | 1.9 | |
| FHW1008UCR51GGT | 510nH | 2% | 45 | 1.3 | ||
| FHW1008UCR51JGT | 510nH | 5% | 45 | 1.3 | ||
| FHW1008UCR51KGT | 510nH | 10% | 45 | 1.3 | ||
| FHW1008UCR50JGT | 500nH | 5% | 45 | 1.25 | ||
| FHW1008UCR50KGT | 500nH | 10% | 45 | 1.25 | ||
| FHW1008UCR50GGT | 500nH | 2% | 45 | 1.25 |